FGP10N60UNDF

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Test Condition :

400V, 10A, 10 Ω, 15V

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Fall Time-Max (tf) :

24.8ns

Transistor Element Material :

SILICON

Power Dissipation :

139W

Current - Collector Pulsed (Icm) :

30A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Vce(on) (Max) @ Vge, Ic :

2.45V @ 15V, 10A

Packaging :

Tube

Factory Lead Time :

4 Weeks

Published :

2013

Package / Case :

TO-220-3

Gate Charge :

37nC

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

600V

Switching Energy :

150μJ (on), 50μJ (off)

Gate-Emitter Voltage-Max :

20V

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Lead Free :

Lead Free

Turn Off Time-Nom (toff) :

89.3 ns

Pbfree Code :

yes

Td (on/off) @ 25°C :

8ns/52.2ns

Gate-Emitter Thr Voltage-Max :

8.5V

Collector Emitter Saturation Voltage :

2.3V

Element Configuration :

Single

IGBT Type :

NPT

Input Type :

Standard

Weight :

1.8g

Number of Elements :

1

Radiation Hardening :

No

HTS Code :

8541.29.00.95

Max Collector Current :

20A

Turn On Delay Time :

8.1 ns

Mount :

Through Hole

Transistor Application :

Motor Control

Width :

4.83mm

Turn On Time :

15.4 ns

Max Power Dissipation :

139W

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Terminal Finish :

Tin (Sn)

Height :

16.51mm

Turn-Off Delay Time :

55 ns

Number of Pins :

3

Number of Terminations :

3

Length :

10.67mm

Reverse Recovery Time :

37.7 ns

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

600V