FGL60N100BNTDTU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Radiation Hardening :

No

Lead Free :

Lead Free

HTS Code :

8541.29.00.95

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Length :

20mm

Height :

26mm

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Saturation Voltage :

1.5V

Turn On Time :

460 ns

IGBT Type :

NPT and Trench

Pbfree Code :

yes

Current Rating :

60A

ECCN Code :

EAR99

Mounting Type :

Through Hole

Weight :

6.756g

Transistor Element Material :

SILICON

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Voltage - Collector Emitter Breakdown (Max) :

1000V

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 1 week ago)

Turn Off Time-Nom (toff) :

760 ns

Gate Charge :

275nC

Width :

5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Td (on/off) @ 25°C :

140ns/630ns

Test Condition :

600V, 60A, 51 Ω, 15V

JESD-609 Code :

e3

Max Power Dissipation :

180W

Collector Emitter Breakdown Voltage :

1kV

Input Type :

Standard

Element Configuration :

Single

Mount :

Through Hole

Max Collector Current :

60A

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

1kV

Voltage - Rated DC :

1kV

Transistor Application :

POWER CONTROL

Power Dissipation :

180W

Reverse Recovery Time :

1.2 μs

Package / Case :

TO-264-3, TO-264AA

Factory Lead Time :

10 Weeks

Current - Collector Pulsed (Icm) :

120A

Vce(on) (Max) @ Vge, Ic :

2.9V @ 15V, 60A