FGH50T65UPD

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Element Configuration :

Single

Width :

4.82mm

Power - Max :

340W

Max Collector Current :

100A

Collector Emitter Saturation Voltage :

2.1V

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Reverse Recovery Time :

53 ns

Factory Lead Time :

50 Weeks

Test Condition :

400V, 50A, 6 Ω, 15V

Switching Energy :

2.7mJ (on), 740μJ (off)

Collector Emitter Breakdown Voltage :

650V

Vce(on) (Max) @ Vge, Ic :

2.3V @ 15V, 50A

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Weight :

6.39g

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Turn On Time :

101 ns

Length :

15.87mm

Transistor Application :

POWER CONTROL

Collector Emitter Voltage (VCEO) :

650V

Mount :

Through Hole

Pbfree Code :

yes

Transistor Element Material :

SILICON

Gate-Emitter Thr Voltage-Max :

7.5V

HTS Code :

8541.29.00.95

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 5 days ago)

Gate-Emitter Voltage-Max :

25V

Turn Off Time-Nom (toff) :

185 ns

JESD-609 Code :

e3

ECCN Code :

EAR99

Published :

2013

Current - Collector Pulsed (Icm) :

150A

Mounting Type :

Through Hole

Fall Time-Max (tf) :

29ns

Case Connection :

COLLECTOR

Max Power Dissipation :

340W

Package / Case :

TO-247-3

Number of Terminations :

3

Polarity/Channel Type :

N-Channel

IGBT Type :

Trench Field Stop

JEDEC-95 Code :

TO-247AB

Input Type :

Standard

Gate Charge :

230nC

Rise Time-Max :

77ns

Number of Elements :

1

Td (on/off) @ 25°C :

32ns/160ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Height :

20.82mm