FDW2511NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

20V

Reach Compliance Code :

Unknown

JESD-609 Code :

e3

Power - Max :

1.6W

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

8

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

17.3nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

2 N-Channel (Dual) Common Drain

Series :

PowerTrench®

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Terminal Finish :

Tin

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

7.1A

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

20V

JESD-30 Code :

R-PDSO-G8

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Qualification Status :

COMMERCIAL

Terminal Form :

Gull wing

Surface Mount :

yes

Drain-source On Resistance-Max :

0.02Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

7.1A

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

20m Ω @ 7.1A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 10V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

RoHS Status :

ROHS3 Compliant