FDW2503N
- Mfr.Part #
- FDW2503N
- Manufacturer
- onsemi
- Package / Case
- 8-TSSOP (0.173, 4.40mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 20V 5.5A 8TSSOP
- Stock
- 19,551
- In Stock :
- 19,551
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Qualification Status :
- COMMERCIAL
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.021Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 4.5V
- Number of Terminations :
- 8
- Drain Current-Max (Abs) (ID) :
- 5.5A
- Peak Reflow Temperature (Cel) :
- 260
- JEDEC-95 Code :
- MO-153AA
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin
- FET Type :
- 2 N-Channel (Dual)
- Terminal Form :
- Gull wing
- Drain to Source Voltage (Vdss) :
- 20V
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 21m Ω @ 5.5A, 4.5V
- Power - Max :
- 600mW
- Number of Elements :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- Unknown
- Pin Count :
- 8
- JESD-30 Code :
- R-PDSO-G8
- Surface Mount :
- yes
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Feature :
- Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A
- Series :
- PowerTrench®
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1082pF @ 10V
- Transistor Application :
- SWITCHING
- Package / Case :
- 8-TSSOP (0.173, 4.40mm Width)
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FDW2503N
FDW2503N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Rochester Electronics, LLC stock available at
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