FDW2507N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Current - Continuous Drain (Id) @ 25°C :

7.5A

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

2152pF @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

7.5A

Surface Mount :

yes

JESD-30 Code :

R-PDSO-G8

Mounting Type :

Surface Mount

Reach Compliance Code :

Unknown

Terminal Finish :

Tin

Drain to Source Voltage (Vdss) :

20V

Transistor Application :

SWITCHING

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

DS Breakdown Voltage-Min :

20V

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Series :

PowerTrench®

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.019Ohm

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

19m Ω @ 7.5A, 4.5V

Qualification Status :

COMMERCIAL

Power - Max :

1.1W