FDS8880
- Mfr.Part #
- FDS8880
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 11.6A 8SOIC
- Stock
- 110,645
- In Stock :
- 110,645
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Threshold Voltage :
- 2.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 10MOhm
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- FET Type :
- N-Channel
- Rise Time :
- 27ns
- Turn-Off Delay Time :
- 38 ns
- Width :
- 4mm
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Dual Supply Voltage :
- 30V
- JESD-609 Code :
- e4
- Series :
- PowerTrench®
- Turn On Delay Time :
- 7 ns
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 11.6A, 10V
- Drain to Source Breakdown Voltage :
- 30V
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Weight :
- 130mg
- Lead Free :
- Lead Free
- Length :
- 5mm
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 15 ns
- Factory Lead Time :
- 18 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Height :
- 1.5mm
- Nominal Vgs :
- 2.5 V
- Number of Terminations :
- 8
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 11.6A
- Current Rating :
- 11.6A
- Power Dissipation-Max :
- 2.5W Ta
- Termination :
- SMD/SMT
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 1235pF @ 15V
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 30V
- Contact Plating :
- Tin
- Power Dissipation :
- 2.5W
- Number of Pins :
- 8
- Current - Continuous Drain (Id) @ 25°C :
- 11.6A Ta
- Published :
- 2001
- Datasheets
- FDS8880
FDS8880 Documents

N-Channel Tape & Reel (TR) 10m Ω @ 11.6A, 10V ±20V 1235pF @ 15V 30nC @ 10V 8-SOIC (0.154, 3.90mm Width)
The FDS8880 is an N-channel MOSFET made with the PowerTrench? method. The FDS8880 N-Channel MOSFET was created with the goal of increasing the overall efficiency of DC/DC converters using synchronous or traditional switching PWM controllers. According to the FDS8880 datasheet, it has been tuned for low gate charge, low rDS(on), and quick switching speed.
FDS8880 Features
Low gate charge
? RoHS Compliant
? rDS(on) = 10m?, VGS = 10V, ID = 11.6A
? rDS(on) = 12m?, VGS = 4.5V, ID = 10.7A
? High power and current handling capability
? High performance trench technology for extremely low rDS(on)
FDS8880 Applications
? DC/DC converters
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