FDS8880

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Mfr.Part #
FDS8880
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 30V 11.6A 8SOIC
Stock
110,645
In Stock :
110,645

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Threshold Voltage :
2.5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Resistance :
10MOhm
Vgs (Max) :
±20V
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
FET Type :
N-Channel
Rise Time :
27ns
Turn-Off Delay Time :
38 ns
Width :
4mm
REACH SVHC :
No SVHC
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Dual Supply Voltage :
30V
JESD-609 Code :
e4
Series :
PowerTrench®
Turn On Delay Time :
7 ns
ECCN Code :
EAR99
Mounting Type :
Surface Mount
Radiation Hardening :
No
Terminal Position :
Dual
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Rds On (Max) @ Id, Vgs :
10m Ω @ 11.6A, 10V
Drain to Source Breakdown Voltage :
30V
Terminal Form :
Gull wing
Gate to Source Voltage (Vgs) :
20V
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Weight :
130mg
Lead Free :
Lead Free
Length :
5mm
Transistor Element Material :
SILICON
Fall Time (Typ) :
15 ns
Factory Lead Time :
18 Weeks
Operating Mode :
ENHANCEMENT MODE
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Height :
1.5mm
Nominal Vgs :
2.5 V
Number of Terminations :
8
Number of Elements :
1
Continuous Drain Current (ID) :
11.6A
Current Rating :
11.6A
Power Dissipation-Max :
2.5W Ta
Termination :
SMD/SMT
Transistor Application :
SWITCHING
Pbfree Code :
yes
Input Capacitance (Ciss) (Max) @ Vds :
1235pF @ 15V
Mount :
Surface Mount
Voltage - Rated DC :
30V
Contact Plating :
Tin
Power Dissipation :
2.5W
Number of Pins :
8
Current - Continuous Drain (Id) @ 25°C :
11.6A Ta
Published :
2001
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS8880 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Terminations:8, Number of Pins:8, FDS8880 pinout, FDS8880 datasheet PDF, FDS8880 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS8880 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS8880


N-Channel Tape & Reel (TR) 10m Ω @ 11.6A, 10V ±20V 1235pF @ 15V 30nC @ 10V 8-SOIC (0.154, 3.90mm Width)

FDS8880 Description


The FDS8880 is an N-channel MOSFET made with the PowerTrench? method. The FDS8880 N-Channel MOSFET was created with the goal of increasing the overall efficiency of DC/DC converters using synchronous or traditional switching PWM controllers. According to the FDS8880 datasheet, it has been tuned for low gate charge, low rDS(on), and quick switching speed.


FDS8880 Features


Low gate charge
? RoHS Compliant
? rDS(on) = 10m?, VGS = 10V, ID = 11.6A
? rDS(on) = 12m?, VGS = 4.5V, ID = 10.7A
? High power and current handling capability
? High performance trench technology for extremely low rDS(on)


FDS8880 Applications


? DC/DC converters
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