FDS8874
- Mfr.Part #
- FDS8874
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 16A 8SOIC
- Stock
- 80
- In Stock :
- 80
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- PowerTrench®
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 16A Ta
- Drain Current-Max (Abs) (ID) :
- 16A
- Input Capacitance (Ciss) (Max) @ Vds :
- 3.99pF @ 15V
- Qualification Status :
- COMMERCIAL
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 8
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- JESD-30 Code :
- R-PDSO-G8
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Terminal Finish :
- MATTE TIN
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 30V
- Power Dissipation-Max :
- 2.5W Ta
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Peak Reflow Temperature (Cel) :
- 260
- Gate Charge (Qg) (Max) @ Vgs :
- 72nC @ 10V
- Drain-source On Resistance-Max :
- 0.0055Ohm
- Avalanche Energy Rating (Eas) :
- 265 mJ
- Number of Elements :
- 1
- Pin Count :
- 8
- Pbfree Code :
- yes
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 5.5m Ω @ 16A, 10V
- Surface Mount :
- yes
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Datasheets
- FDS8874

N-Channel Tape & Reel (TR) 5.5m Ω @ 16A, 10V ±20V 3.99pF @ 15V 72nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
FDS8874 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 265 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3.99pF @ 15V.There is no drain current on this device since the maximum continuous current it can conduct is 16A.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
FDS8874 Features
the avalanche energy rating (Eas) is 265 mJ
a 30V drain to source voltage (Vdss)
FDS8874 Applications
There are a lot of Rochester Electronics, LLC
FDS8874 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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