FDS8870

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Series :

PowerTrench®

Resistance :

4.2mOhm

Drain to Source Breakdown Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage - Rated DC :

30V

Number of Pins :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Qualification Status :

Not Qualified

Threshold Voltage :

2.5V

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Weight :

130mg

Continuous Drain Current (ID) :

18A

Nominal Vgs :

2.5 V

Number of Terminations :

8

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

2.5W Ta

Lead Free :

Lead Free

Turn On Delay Time :

9 ns

Turn-Off Delay Time :

60 ns

Height :

1.5mm

Length :

5mm

Avalanche Energy Rating (Eas) :

420 mJ

Current - Continuous Drain (Id) @ 25°C :

18A Ta

Mount :

Surface Mount

Rise Time :

48ns

FET Type :

N-Channel

Power Dissipation :

2.5W

Pbfree Code :

yes

JESD-609 Code :

e4

Published :

2001

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

4615pF @ 15V

Width :

4mm

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

18 Weeks

Terminal Position :

Dual

Current Rating :

18A

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 18A, 10V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

112nC @ 10V

Fall Time (Typ) :

21 ns