FDS8672S
- Mfr.Part #
- FDS8672S
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 18A 8SOIC
- Stock
- 7,605
- In Stock :
- 7,605
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Resistance :
- 4.8mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.5mm
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 2670pF @ 15V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Power Dissipation :
- 1W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 8
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 26 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rise Time :
- 4ns
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Length :
- 5mm
- Series :
- PowerTrench®, SyncFET™
- Turn On Delay Time :
- 12 ns
- Current - Continuous Drain (Id) @ 25°C :
- 18A Ta
- Drain to Source Breakdown Voltage :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Threshold Voltage :
- 2.1V
- Nominal Vgs :
- 2.1 V
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Rds On (Max) @ Id, Vgs :
- 4.8m Ω @ 18A, 10V
- Power Dissipation-Max :
- 2.5W Ta
- Continuous Drain Current (ID) :
- 18A
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 8
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Weight :
- 130mg
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Width :
- 4mm
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- JESD-609 Code :
- e4
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- Feedback Cap-Max (Crss) :
- 205 pF
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time :
- 18 Weeks
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Qualification Status :
- Not Qualified
- Fall Time (Typ) :
- 4 ns
- Datasheets
- FDS8672S

N-Channel Tape & Reel (TR) 4.8m Ω @ 18A, 10V ±20V 2670pF @ 15V 41nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS8672S Description
The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(on) and low gate charge. The FDS8672S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using ON Semiconductor's monolithic SyncFET technology.
FDS8672S Features
-
Includes SyncFET Schottky Body Diode
-
High Performance Trench Technology for Extremely Low RDS(on) and Fast Switching
-
High Power and Current Handling Capability
-
100% Rg (Gate Resistance) Tested
-
This Device is Pb?Free, Halogen Free/BFR Free and is RoHS Compliant
-
Lead Free
-
No SVHC
FDS8672S Applications
-
Notebook Vcore Low Side Switch
-
Synchronous Rectifier for DC/DC Converters
-
Point of Load Low Side Switch
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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