FDS86252

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

150V

Vgs (Max) :

±20V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Power Dissipation :

5W

Feedback Cap-Max (Crss) :

5 pF

Number of Pins :

8

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

4.5A

Terminal Position :

Dual

FET Type :

N-Channel

Turn On Delay Time :

9.2 ns

Rise Time :

1.6ns

Element Configuration :

Single

Number of Terminations :

8

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Weight :

130mg

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

955pF @ 75V

Turn-Off Delay Time :

14 ns

Factory Lead Time :

9 Weeks

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Fall Time (Typ) :

2.9 ns

Height :

1.5mm

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

55m Ω @ 4.5A, 10V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

JESD-609 Code :

e4

Series :

PowerTrench®

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Published :

2008

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

3.4V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Radiation Hardening :

No

Nominal Vgs :

3.4 V

Width :

5mm

Number of Elements :

1

ECCN Code :

EAR99

Power Dissipation-Max :

2.5W Ta 5W Tc

Drain-source On Resistance-Max :

0.055Ohm