FDS4935A
- Mfr.Part #
- FDS4935A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 7
- Stock
- 42,526
- In Stock :
- 42,526
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Number of Elements :
- 2
- Nominal Vgs :
- -1.6 V
- Factory Lead Time :
- 10 Weeks
- Length :
- 5mm
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Turn On Delay Time :
- 13 ns
- Series :
- PowerTrench®
- Voltage - Rated DC :
- -30V
- Dual Supply Voltage :
- -30V
- Max Power Dissipation :
- 900mW
- Number of Pins :
- 8
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- -30V
- Transistor Element Material :
- SILICON
- Termination :
- SMD/SMT
- Resistance :
- 23mOhm
- Contact Plating :
- Tin
- Height :
- 1.5mm
- Current Rating :
- -7A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Threshold Voltage :
- -1.6V
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 5V
- Element Configuration :
- Dual
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 1233pF @ 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage :
- 30V
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 8
- Operating Mode :
- ENHANCEMENT MODE
- Current :
- 7A
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Width :
- 4mm
- FET Feature :
- Logic Level Gate
- Turn-Off Delay Time :
- 48 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 25 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Power Dissipation :
- 1.6W
- Rise Time :
- 10ns
- Lead Free :
- Lead Free
- Published :
- 2002
- Continuous Drain Current (ID) :
- 7A
- Rds On (Max) @ Id, Vgs :
- 23m Ω @ 7A, 10V
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- FET Type :
- 2 P-Channel (Dual)
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Datasheets
- FDS4935A

FDS4935A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS4935A Description
This P-channel MOSFET is a rugged gate version of advanced PowerTritch technology. It is optimized for power management applications that require a wide range of rated driving voltages (4.5V-20V).
FDS4935A
Features
-7A, -30V
RDS(ON) = 23 mΩ @ VGS = -10V
RDS(ON) = 35 mΩ @ VGS = -4.5V
Low gate charge (15nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS4935A Applications
This product is general usage and suitable for many different applications.
Power Management
Load Switch
Battery Protection
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