FDS4072N7
- Mfr.Part #
- FDS4072N7
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 12.4A 8SO
- Stock
- 9,775
- In Stock :
- 9,775
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- COMMERCIAL
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PDSO-G8
- JESD-609 Code :
- e4
- Drain Current-Max (Abs) (ID) :
- 12.4A
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 4.299pF @ 20V
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 40V
- Series :
- PowerTrench®
- Drain-source On Resistance-Max :
- 0.009Ohm
- Number of Terminations :
- 8
- Power Dissipation-Max :
- 3W Ta
- Packaging :
- Tape and Reel (TR)
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Reach Compliance Code :
- Unknown
- Pbfree Code :
- yes
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Vgs (Max) :
- ±12V
- Pulsed Drain Current-Max (IDM) :
- 60A
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 13.7A, 10V
- Terminal Finish :
- NICKEL PALLADIUM GOLD
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 4.5V
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 12.4A Ta
- DS Breakdown Voltage-Min :
- 40V
- Pin Count :
- 8
- Datasheets
- FDS4072N7

N-Channel Tape & Reel (TR) 9m Ω @ 13.7A, 10V ±12V 4.299pF @ 20V 46nC @ 4.5V 40V 8-SOIC (0.154, 3.90mm Width)
FDS4072N7 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 200 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4.299pF @ 20V.12.4A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 60A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 40V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 40V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
FDS4072N7 Features
the avalanche energy rating (Eas) is 200 mJ
based on its rated peak drain current 60A.
a 40V drain to source voltage (Vdss)
FDS4072N7 Applications
There are a lot of Rochester Electronics, LLC
FDS4072N7 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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