FDS4897C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Series :

PowerTrench®

Terminal Position :

Dual

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Weight :

187mg

Height :

1.5mm

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 20V

Mount :

Surface Mount

Length :

5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Radiation Hardening :

No

Fall Time (Typ) :

18 ns

Pbfree Code :

yes

Mounting Type :

Surface Mount

Number of Pins :

8

Published :

2005

Rds On (Max) @ Id, Vgs :

29m Ω @ 6.2A, 10V

Number of Elements :

2

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Drain to Source Breakdown Voltage :

40V

Resistance :

29mOhm

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Rise Time :

15ns

Turn-Off Delay Time :

45 ns

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

6.2A 4.4A

Operating Temperature :

-55°C~150°C TJ

Width :

4mm

Power Dissipation :

2W

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

4.4A

Max Power Dissipation :

900mW

FET Type :

N and P-Channel

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

FET Feature :

Logic Level Gate

Number of Terminations :

8

Threshold Voltage :

1.9V