FDS4559

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Nominal Vgs :

2.2 V

FET Feature :

Logic Level Gate

Threshold Voltage :

2.2V

Turn-Off Delay Time :

19 ns

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

90 mJ

Number of Channels :

2

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

2W

Pbfree Code :

yes

Series :

PowerTrench®

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

Width :

4mm

Max Power Dissipation :

2W

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Fall Time (Typ) :

12 ns

Current Rating :

4.5A

Radiation Hardening :

No

Lead Free :

Lead Free

JESD-609 Code :

e3

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Rds On (Max) @ Id, Vgs :

55m Ω @ 4.5A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Termination :

SMD/SMT

Number of Terminations :

8

Power - Max :

1W

Factory Lead Time :

8 Weeks

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

4.5A 3.5A

Transistor Element Material :

SILICON

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Max Junction Temperature (Tj) :

175°C

Dual Supply Voltage :

60V

Drain to Source Breakdown Voltage :

60V

Resistance :

55mOhm

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

FET Type :

N and P-Channel

Height :

1.75mm

Element Configuration :

Dual

Continuous Drain Current (ID) :

4.5A

Length :

5mm

Weight :

187mg

Published :

2002

Number of Elements :

2

Rise Time :

10ns