FDP8896

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

30V

Turn-Off Delay Time :

56 ns

Power Dissipation-Max :

80W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Height :

9.4mm

Continuous Drain Current (ID) :

92A

Turn On Delay Time :

9 ns

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

74 mJ

Lead Free :

Lead Free

Packaging :

Tube

Mounting Type :

Through Hole

Case Connection :

DRAIN

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Voltage - Rated DC :

30V

Number of Pins :

3

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

Number of Elements :

1

HTS Code :

8541.29.00.95

Current Rating :

92A

Length :

10.67mm

Current - Continuous Drain (Id) @ 25°C :

16A Ta 92A Tc

Operating Temperature :

-55°C~175°C TJ

Series :

PowerTrench®

Resistance :

5.9mOhm

Input Capacitance (Ciss) (Max) @ Vds :

2525pF @ 15V

Vgs (Max) :

±20V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

44 ns

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pbfree Code :

yes

FET Type :

N-Channel

Factory Lead Time :

10 Weeks

Current :

60A

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 35A, 10V

Width :

4.83mm

Element Configuration :

Single

Power Dissipation :

80W

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Voltage :

30V

Published :

2004

Mount :

Through Hole

Radiation Hardening :

No

Rise Time :

103ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Terminations :

3

Package / Case :

TO-220-3