FDP8447L
- Mfr.Part #
- FDP8447L
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 12A/50A TO220-3
- Stock
- 3
- In Stock :
- 3
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 49nC @ 10V
- Transistor Application :
- SWITCHING
- Series :
- PowerTrench®
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Published :
- 2006
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 28 ns
- Lead Free :
- Lead Free
- Drain Current-Max (Abs) (ID) :
- 50A
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta 50A Tc
- Turn On Delay Time :
- 9 ns
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 8.7m Ω @ 14A, 10V
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Factory Lead Time :
- 9 Weeks
- Number of Terminations :
- 3
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Resistance :
- 8.7mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 20V
- JEDEC-95 Code :
- TO-220AB
- Continuous Drain Current (ID) :
- 12A
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Weight :
- 1.8g
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 2W
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 40V
- Rise Time :
- 7ns
- Package / Case :
- TO-220-3
- Fall Time (Typ) :
- 4 ns
- Power Dissipation-Max :
- 2W Ta 60W Tc
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Datasheets
- FDP8447L

N-Channel Tube 8.7m Ω @ 14A, 10V ±20V 2500pF @ 20V 49nC @ 10V TO-220-3
FDP8447L Description
Fairchild Semiconductor's unique PowerTrench technology was used to develop this N-Channel MOSFET, which has a low RDS(on) and optimized BVDSS capability for enhanced performance in the application. This N-Channel MOSFET was made with patented PowerTrench technology to provide reduced RDS(on) and optimum BVDSS capability for better performance in the application.
FDP8447L Features
-
Max rDS(on) = 8.7m? at VGS = 10V, ID = 14A
-
Max rDS(on) = 11.2m? at VGS = 4.5V, ID = 11A
-
Fast Switching
-
RoHS Compliant
FDP8447L Applications
-
Inverter
-
Power Supplies
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