FDP8440

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

130ns

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Height :

16.51mm

Mount :

Through Hole

Published :

2017

Length :

10.67mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Power Dissipation :

306W

Radiation Hardening :

No

Resistance :

2.2MOhm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Input Capacitance :

24.74nF

Pulsed Drain Current-Max (IDM) :

500A

Number of Elements :

1

Width :

4.83mm

Transistor Application :

SWITCHING

Package / Case :

TO-220AB

Min Operating Temperature :

-55°C

Drain to Source Resistance :

2.2MOhm

Pbfree Code :

yes

Max Power Dissipation :

306W

Continuous Drain Current (ID) :

277A

Element Configuration :

Single

Number of Terminations :

3

Drain to Source Breakdown Voltage :

40V

Packaging :

Tube

Number of Pins :

3

Rds On Max :

2.2 MΩ

Fall Time (Typ) :

290 ns

Turn-Off Delay Time :

435 ns

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

9 Weeks

Drain to Source Voltage (Vdss) :

40V

Turn On Delay Time :

43 ns

Weight :

1.8g

Max Operating Temperature :

175°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)