FDP8441

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Rise Time :

24ns

Case Connection :

DRAIN

Radiation Hardening :

No

Vgs (Max) :

±20V

Turn-Off Delay Time :

75 ns

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

JEDEC-95 Code :

TO-220AB

Power Dissipation :

300W

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 80A, 10V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Fall Time (Typ) :

17.9 ns

Power Dissipation-Max :

300W Tc

Number of Pins :

3

Drain to Source Breakdown Voltage :

40V

Factory Lead Time :

9 Weeks

Number of Elements :

1

Element Configuration :

Single

Voltage - Rated DC :

40V

Avalanche Energy Rating (Eas) :

947 mJ

Resistance :

2.7MOhm

FET Type :

N-Channel

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

15000pF @ 25V

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

80A

Series :

PowerTrench®

Operating Temperature :

-55°C~175°C TJ

Weight :

1.8g

Current - Continuous Drain (Id) @ 25°C :

23A Ta 80A Tc

Turn On Delay Time :

23 ns

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

2.8V

ECCN Code :

EAR99

Packaging :

Tube

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Continuous Drain Current (ID) :

80A

Pbfree Code :

yes

Lead Free :

Lead Free

Transistor Element Material :

SILICON