FDP80N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

113 ns

Lead Free :

Lead Free

Width :

4.83mm

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 10V

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Mounting Type :

Through Hole

Series :

UniFET™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

176W Tc

Transistor Application :

SWITCHING

Mount :

Through Hole

Qualification Status :

Not Qualified

Turn On Delay Time :

32 ns

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

60V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Rise Time :

259ns

Resistance :

10MOhm

Weight :

1.8g

Number of Elements :

1

Continuous Drain Current (ID) :

80A

Length :

10.67mm

Vgs (Max) :

±20V

Pbfree Code :

yes

Transistor Element Material :

SILICON

Factory Lead Time :

5 Weeks

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Rds On (Max) @ Id, Vgs :

10m Ω @ 40A, 10V

Package / Case :

TO-220-3

RoHS Status :

ROHS3 Compliant

Power Dissipation :

176W

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3

Height :

16.51mm

Turn-Off Delay Time :

136 ns

Input Capacitance (Ciss) (Max) @ Vds :

3190pF @ 25V

Avalanche Energy Rating (Eas) :

480 mJ

Gate to Source Voltage (Vgs) :

20V

Published :

2013