FDP80N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Power Dissipation :

176W

Terminal Finish :

Tin (Sn)

Factory Lead Time :

5 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

10m Ω @ 40A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

FET Type :

N-Channel

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

16.51mm

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Fall Time (Typ) :

113 ns

Mounting Type :

Through Hole

Weight :

1.8g

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Input Capacitance (Ciss) (Max) @ Vds :

3190pF @ 25V

Series :

UniFET™

Avalanche Energy Rating (Eas) :

480 mJ

Continuous Drain Current (ID) :

80A

Rise Time :

259ns

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Mount :

Through Hole

Turn On Delay Time :

32 ns

Width :

4.83mm

Lead Free :

Lead Free

Published :

2013

Pbfree Code :

yes

Qualification Status :

Not Qualified

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Resistance :

10MOhm

Length :

10.67mm

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Element Configuration :

Single

Drain to Source Breakdown Voltage :

60V

Turn-Off Delay Time :

136 ns

Power Dissipation-Max :

176W Tc

Gate to Source Voltage (Vgs) :

20V