FDP8878

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Mfr.Part #
FDP8878
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 30V 40A TO220-3
Stock
46,248
In Stock :
46,248

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2001
Rds On (Max) @ Id, Vgs :
15m Ω @ 40A, 10V
Element Configuration :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
N-Channel
Power Dissipation-Max :
40.5W Tc
Fall Time (Typ) :
35.3 ns
Input Capacitance (Ciss) (Max) @ Vds :
1235pF @ 15V
Series :
PowerTrench®
Drain to Source Breakdown Voltage :
30V
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Package / Case :
TO-220-3
Mount :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Power Dissipation :
40.5W
Turn-Off Delay Time :
14.8 ns
Continuous Drain Current (ID) :
40A
Number of Elements :
1
Rise Time :
244ns
Current - Continuous Drain (Id) @ 25°C :
40A Tc
Weight :
1.8g
Lead Free :
Lead Free
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-55°C~175°C TJ
Mounting Type :
Through Hole
Packaging :
Tube
Vgs (Max) :
±20V
RoHS Status :
RoHS Compliant
Datasheets
FDP8878
Introducing Transistors - FETs, MOSFETs - Single onsemi FDP8878 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, FDP8878 pinout, FDP8878 datasheet PDF, FDP8878 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDP8878 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDP8878


N-Channel Tube 15m Ω @ 40A, 10V ±20V 1235pF @ 15V 23nC @ 10V TO-220-3


FDP8878   Description


 This N-channel MOSFET is specifically designed to improve the overall efficiency of DC/DC converters using the following technologies synchronous or conventional switching PWM controllers. It has been optimized for low gate characteristics (conduction) and fast switching speed.

 

FDP8878     Features


TDS(ON)= 15mΩ,VGs=10VID=40A

TDS(ON)=19mΩVGs=4.5VID=36A

High performance trench technologyfor extremely low DS(ON)

Low gate charge

. High power and current handling capability

.RoHS Compliant

 

FDP8878     Applications

low gate characteristics (conduction) and fast switching speed


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