FDP8876

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Terminations :

3

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Rds On (Max) @ Id, Vgs :

8.7m Ω @ 40A, 10V

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Avalanche Energy Rating (Eas) :

180 mJ

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

30V

JESD-609 Code :

e3

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

1.7pF @ 15V

Drain-source On Resistance-Max :

0.0105Ohm

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

COMMERCIAL

Surface Mount :

No

JESD-30 Code :

R-PSFM-T3

Drain Current-Max (Abs) (ID) :

70A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

PowerTrench®

FET Type :

N-Channel

Pbfree Code :

yes

Case Connection :

DRAIN

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

Not Applicable

Terminal Finish :

MATTE TIN

Power Dissipation-Max :

70W Tc

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3