FDP8870

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Width :

4.83mm

Fall Time (Typ) :

46 ns

Packaging :

Tube

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Radiation Hardening :

No

Power Dissipation :

160W

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Voltage - Rated DC :

30V

Drain to Source Resistance :

4.1mOhm

Mount :

Through Hole

Number of Pins :

3

Drain to Source Breakdown Voltage :

30V

Lead Free :

Lead Free

Polarity/Channel Type :

N-Channel

Height :

9.4mm

RoHS Status :

ROHS3 Compliant

Weight :

1.8g

Number of Terminations :

3

Rise Time :

105ns

Min Operating Temperature :

-55°C

Drain to Source Voltage (Vdss) :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

20V

Rds On Max :

4.1 mΩ

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220AB

Threshold Voltage :

2.5V

Current Rating :

160A

Turn On Delay Time :

11 ns

Pbfree Code :

yes

Input Capacitance :

5.2nF

Element Configuration :

Single

Factory Lead Time :

10 Weeks

Resistance :

4.1mOhm

REACH SVHC :

No SVHC

Published :

2004

Turn-Off Delay Time :

70 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

ECCN Code :

EAR99

Length :

10.67mm

Max Operating Temperature :

175°C

Nominal Vgs :

2.5 V

Number of Elements :

1

Continuous Drain Current (ID) :

156A

Max Power Dissipation :

160W