FDP8870

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Max Operating Temperature :

175°C

REACH SVHC :

No SVHC

Power Dissipation :

160W

Resistance :

4.1mOhm

Input Capacitance :

5.2nF

Voltage - Rated DC :

30V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Width :

4.83mm

Turn-Off Delay Time :

70 ns

Rds On Max :

4.1 mΩ

Number of Pins :

3

Radiation Hardening :

No

Transistor Application :

SWITCHING

Current Rating :

160A

Drain to Source Voltage (Vdss) :

30V

Drain to Source Breakdown Voltage :

30V

Length :

10.67mm

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Turn On Delay Time :

11 ns

Max Power Dissipation :

160W

Pbfree Code :

yes

Threshold Voltage :

2.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

10 Weeks

Weight :

1.8g

JESD-609 Code :

e3

Rise Time :

105ns

Package / Case :

TO-220AB

Continuous Drain Current (ID) :

156A

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

Mount :

Through Hole

Height :

9.4mm

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Published :

2004

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Resistance :

4.1mOhm

Packaging :

Tube

Nominal Vgs :

2.5 V

Number of Terminations :

3

Case Connection :

DRAIN

Fall Time (Typ) :

46 ns

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V