FDP8860
- Mfr.Part #
- FDP8860
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 8
- Stock
- 888
- In Stock :
- 888
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-220AB
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 254W Tc
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Rise Time :
- 135ns
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- 30V
- Series :
- PowerTrench®
- Turn-Off Delay Time :
- 64 ns
- Transistor Element Material :
- SILICON
- Resistance :
- 2.5MOhm
- Fall Time (Typ) :
- 59 ns
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Pulsed Drain Current-Max (IDM) :
- 556A
- Gate Charge (Qg) (Max) @ Vgs :
- 222nC @ 10V
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 10 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 12240pF @ 15V
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 80A
- Width :
- 4.83mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation :
- 254W
- Number of Pins :
- 3
- Height :
- 9.4mm
- Transistor Application :
- SWITCHING
- Current Rating :
- 80A
- Vgs (Max) :
- ±20V
- Threshold Voltage :
- 1.6V
- Rds On (Max) @ Id, Vgs :
- 2.5m Ω @ 80A, 10V
- Weight :
- 1.8g
- Voltage - Rated DC :
- 30V
- Published :
- 2006
- JESD-609 Code :
- e3
- Length :
- 10.67mm
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Mounting Type :
- Through Hole
- Turn On Delay Time :
- 35 ns
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Package / Case :
- TO-220-3
- Datasheets
- FDP8860

N-Channel Tube 2.5m Ω @ 80A, 10V ±20V 12240pF @ 15V 222nC @ 10V TO-220-3
FDP8860 Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on) and fast switching speed.
FDP8860 Features
Max. RDS(on) = 2.5mΩ at VGS = 10V, ID = 80A
Max. RDS(on) = 2.9mΩ at VGS = 4.5V, ID = 80A
Low Miller Charge
Low Qrr Body Diode
UIL Capability (Single Pulse and Repetitive Pulse)
RoHS Compliant
FDP8860 Applications
This product is general usage and suitable for many different applications.
DC-DC Conversion
Start / Alternator Systems
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
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