FDMT80080DC

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Mfr.Part #
FDMT80080DC
Manufacturer
onsemi
Package / Case
8-PowerVDFN
Datasheet
Download
Description
MOSFET N-CH 80V 36A/254A 8DUAL
Stock
4,738
In Stock :
4,738

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Peak Reflow Temperature (Cel) :
260
Vgs(th) (Max) @ Id :
4V @ 250µA
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Surface Mount
Drain to Source Voltage (Vdss) :
80V
Drive Voltage (Max Rds On,Min Rds On) :
8V 10V
ECCN Code :
EAR99
Pbfree Code :
yes
Mount :
Surface Mount
Package / Case :
8-PowerVDFN
Continuous Drain Current (ID) :
254A
Packaging :
Tape and Reel (TR)
Gate Charge (Qg) (Max) @ Vgs :
273nC @ 10V
Element Configuration :
Single
Power Dissipation-Max :
3.2W Ta 156W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
36A Ta 254A Tc
Terminal Finish :
Tin (Sn)
Rds On (Max) @ Id, Vgs :
1.35m Ω @ 36A, 10V
Series :
Dual Cool™, PowerTrench®
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Factory Lead Time :
27 Weeks
Input Capacitance (Ciss) (Max) @ Vds :
20720pF @ 40V
Weight :
248.52072mg
FET Type :
N-Channel
Reach Compliance Code :
not_compliant
Lead Free :
Lead Free
Number of Pins :
8
Datasheets
FDMT80080DC
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMT80080DC from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:8-PowerVDFN, Number of Pins:8, FDMT80080DC pinout, FDMT80080DC datasheet PDF, FDMT80080DC amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMT80080DC ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMT80080DC


N-Channel Tape & Reel (TR) 1.35m Ω @ 36A, 10V ±20V 20720pF @ 40V 273nC @ 10V 80V 8-PowerVDFN

FDMT80080DC Description


Utilizing the cutting-edge PowerTrench? method, this N-Channel MOSFET was created. The lowest rDS(on) while maintaining outstanding switching performance has been achieved by combining advancements in both silicon and Dual CoolTM package technologies. This is made possible by the incredibly low Junction-to-Ambient thermal resistance.



FDMT80080DC Features


  • Max rDS(on) = 1.35 m|? at VGS = 10 V, ID = 36 A

  • Max rDS(on) = 1.82 m|? at VGS = 8 V, ID = 31 A

  • Advanced Package and Silicon combination for low rDS(on) and high efficiency

  • Next generation enhanced body diode technology, engineered for soft recovery

  • Low profile 8x8mm MLP package

  • MSL1 robust package design

  • 100% UIL tested

  • RoHS Compliant



FDMT80080DC Applications


  • Oring FET / Load Switch

  • Synchronous Rectification

  • DC-DC Conversion


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