FDMT80080DC

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Mfr.Part #
FDMT80080DC
Manufacturer
onsemi
Package / Case
8-PowerVDFN
Datasheet
Download
Description
MOSFET N-CH 80V 36A/254A 8DUAL
Stock
4,738
In Stock :
4,738

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Power Dissipation-Max :
3.2W Ta 156W Tc
Drain to Source Voltage (Vdss) :
80V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Finish :
Tin (Sn)
Operating Temperature :
-55°C~150°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
20720pF @ 40V
Factory Lead Time :
27 Weeks
Peak Reflow Temperature (Cel) :
260
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Drive Voltage (Max Rds On,Min Rds On) :
8V 10V
Gate Charge (Qg) (Max) @ Vgs :
273nC @ 10V
Number of Pins :
8
ECCN Code :
EAR99
Reach Compliance Code :
not_compliant
Lead Free :
Lead Free
Element Configuration :
Single
JESD-609 Code :
e3
Weight :
248.52072mg
Series :
Dual Cool™, PowerTrench®
Pbfree Code :
yes
Rds On (Max) @ Id, Vgs :
1.35m Ω @ 36A, 10V
Package / Case :
8-PowerVDFN
Mounting Type :
Surface Mount
Continuous Drain Current (ID) :
254A
Mount :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
36A Ta 254A Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
4V @ 250µA
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Datasheets
FDMT80080DC
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMT80080DC from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:8, Package / Case:8-PowerVDFN, Mounting Type:Surface Mount, FDMT80080DC pinout, FDMT80080DC datasheet PDF, FDMT80080DC amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMT80080DC ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMT80080DC


N-Channel Tape & Reel (TR) 1.35m Ω @ 36A, 10V ±20V 20720pF @ 40V 273nC @ 10V 80V 8-PowerVDFN

FDMT80080DC Description


Utilizing the cutting-edge PowerTrench? method, this N-Channel MOSFET was created. The lowest rDS(on) while maintaining outstanding switching performance has been achieved by combining advancements in both silicon and Dual CoolTM package technologies. This is made possible by the incredibly low Junction-to-Ambient thermal resistance.



FDMT80080DC Features


  • Max rDS(on) = 1.35 m|? at VGS = 10 V, ID = 36 A

  • Max rDS(on) = 1.82 m|? at VGS = 8 V, ID = 31 A

  • Advanced Package and Silicon combination for low rDS(on) and high efficiency

  • Next generation enhanced body diode technology, engineered for soft recovery

  • Low profile 8x8mm MLP package

  • MSL1 robust package design

  • 100% UIL tested

  • RoHS Compliant



FDMT80080DC Applications


  • Oring FET / Load Switch

  • Synchronous Rectification

  • DC-DC Conversion


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