FDMT80080DC
- Mfr.Part #
- FDMT80080DC
- Manufacturer
- onsemi
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 36A/254A 8DUAL
- Stock
- 4,738
- In Stock :
- 4,738
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- 260
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 80V
- Drive Voltage (Max Rds On,Min Rds On) :
- 8V 10V
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Package / Case :
- 8-PowerVDFN
- Continuous Drain Current (ID) :
- 254A
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 273nC @ 10V
- Element Configuration :
- Single
- Power Dissipation-Max :
- 3.2W Ta 156W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 36A Ta 254A Tc
- Terminal Finish :
- Tin (Sn)
- Rds On (Max) @ Id, Vgs :
- 1.35m Ω @ 36A, 10V
- Series :
- Dual Cool™, PowerTrench®
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Factory Lead Time :
- 27 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 20720pF @ 40V
- Weight :
- 248.52072mg
- FET Type :
- N-Channel
- Reach Compliance Code :
- not_compliant
- Lead Free :
- Lead Free
- Number of Pins :
- 8
- Datasheets
- FDMT80080DC

N-Channel Tape & Reel (TR) 1.35m Ω @ 36A, 10V ±20V 20720pF @ 40V 273nC @ 10V 80V 8-PowerVDFN
FDMT80080DC Description
Utilizing the cutting-edge PowerTrench? method, this N-Channel MOSFET was created. The lowest rDS(on) while maintaining outstanding switching performance has been achieved by combining advancements in both silicon and Dual CoolTM package technologies. This is made possible by the incredibly low Junction-to-Ambient thermal resistance.
FDMT80080DC Features
-
Max rDS(on) = 1.35 m|? at VGS = 10 V, ID = 36 A
-
Max rDS(on) = 1.82 m|? at VGS = 8 V, ID = 31 A
-
Advanced Package and Silicon combination for low rDS(on) and high efficiency
-
Next generation enhanced body diode technology, engineered for soft recovery
-
Low profile 8x8mm MLP package
-
MSL1 robust package design
-
100% UIL tested
-
RoHS Compliant
FDMT80080DC Applications
-
Oring FET / Load Switch
-
Synchronous Rectification
-
DC-DC Conversion
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