FDMT80080DC
- Mfr.Part #
- FDMT80080DC
- Manufacturer
- onsemi
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 36A/254A 8DUAL
- Stock
- 4,738
- In Stock :
- 4,738
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Series :
- Dual Cool™, PowerTrench®
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 27 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 8V 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 20720pF @ 40V
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Reach Compliance Code :
- not_compliant
- Drain to Source Voltage (Vdss) :
- 80V
- Rds On (Max) @ Id, Vgs :
- 1.35m Ω @ 36A, 10V
- Number of Pins :
- 8
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 254A
- Gate Charge (Qg) (Max) @ Vgs :
- 273nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 36A Ta 254A Tc
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 3.2W Ta 156W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Finish :
- Tin (Sn)
- Weight :
- 248.52072mg
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- 8-PowerVDFN
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Datasheets
- FDMT80080DC
FDMT80080DC Documents

N-Channel Tape & Reel (TR) 1.35m Ω @ 36A, 10V ±20V 20720pF @ 40V 273nC @ 10V 80V 8-PowerVDFN
FDMT80080DC Description
Utilizing the cutting-edge PowerTrench? method, this N-Channel MOSFET was created. The lowest rDS(on) while maintaining outstanding switching performance has been achieved by combining advancements in both silicon and Dual CoolTM package technologies. This is made possible by the incredibly low Junction-to-Ambient thermal resistance.
FDMT80080DC Features
-
Max rDS(on) = 1.35 m|? at VGS = 10 V, ID = 36 A
-
Max rDS(on) = 1.82 m|? at VGS = 8 V, ID = 31 A
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Advanced Package and Silicon combination for low rDS(on) and high efficiency
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Next generation enhanced body diode technology, engineered for soft recovery
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Low profile 8x8mm MLP package
-
MSL1 robust package design
-
100% UIL tested
-
RoHS Compliant
FDMT80080DC Applications
-
Oring FET / Load Switch
-
Synchronous Rectification
-
DC-DC Conversion
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