FDMT800150DC
- Mfr.Part #
- FDMT800150DC
- Manufacturer
- onsemi
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 15A/99A 8DUAL
- Stock
- 117
- In Stock :
- 117
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 248.52072mg
- Lead Free :
- Lead Free
- Drain to Source Voltage (Vdss) :
- 150V
- Reach Compliance Code :
- not_compliant
- RoHS Status :
- ROHS3 Compliant
- Series :
- Dual Cool™, PowerTrench®
- Current - Continuous Drain (Id) @ 25°C :
- 15A Ta 99A Tc
- Peak Reflow Temperature (Cel) :
- 260
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 20 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 99A
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 3.2W Ta 156W Tc
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 8205pF @ 75V
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Rds On (Max) @ Id, Vgs :
- 6.5m Ω @ 15A, 10V
- JESD-609 Code :
- e3
- Package / Case :
- 8-PowerVDFN
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 108nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 8
- Terminal Finish :
- Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- FDMT800150DC

N-Channel Tape & Reel (TR) 6.5m Ω @ 15A, 10V ±20V 8205pF @ 75V 108nC @ 10V 150V 8-PowerVDFN
FDMT800150DC MOSFET Description
This N-Channel MOSFET is produced using an advanced PowerTrench? process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
FDMT800150DC MOSFET Features
Low profile 8x8mm MLP package
Next-generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Max rDS(on) = 8.4 mΩ at VGS = 6 V, ID = 13 A
Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 15 A
RoHS Compliant
100% UIL tested
FDMT800150DC MOSFET Applications
Oring FET / Load Switch
MCU
Synchronous Rectification
DC-DC Conversion
Arduino
Lighting
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