FDMT800120DC

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Mfr.Part #
FDMT800120DC
Manufacturer
onsemi
Package / Case
8-PowerVDFN
Datasheet
Download
Description
MOSFET N-CH 120V 20A 8DLCOOL88
Stock
3,543
In Stock :
3,543

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
9.5 ns
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Number of Pins :
8
Power Dissipation-Max :
3.2W Ta 156W Tc
Terminal Finish :
Tin (Sn)
Weight :
248.52072mg
Mount :
Surface Mount
Peak Reflow Temperature (Cel) :
260
JESD-609 Code :
e3
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
7850pF @ 60V
Turn-Off Delay Time :
40 ns
Pbfree Code :
yes
Packaging :
Tape and Reel (TR)
Gate to Source Voltage (Vgs) :
20V
Operating Temperature :
-55°C~150°C TJ
Turn On Delay Time :
29 ns
Series :
Dual Cool™, PowerTrench®
Vgs(th) (Max) @ Id :
4V @ 250µA
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
107nC @ 10V
Rise Time :
18ns
Package / Case :
8-PowerVDFN
Drain to Source Voltage (Vdss) :
120V
Reach Compliance Code :
not_compliant
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
20A Ta 129A Tc
Mounting Type :
Surface Mount
Continuous Drain Current (ID) :
129A
Factory Lead Time :
20 Weeks
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Rds On (Max) @ Id, Vgs :
4.14m Ω @ 20A, 10V
Datasheets
FDMT800120DC
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMT800120DC from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Operating Temperature:-55°C~150°C TJ, Package / Case:8-PowerVDFN, Mounting Type:Surface Mount, FDMT800120DC pinout, FDMT800120DC datasheet PDF, FDMT800120DC amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMT800120DC ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMT800120DC


N-Channel Tape & Reel (TR) 4.14m Ω @ 20A, 10V ±20V 7850pF @ 60V 107nC @ 10V 120V 8-PowerVDFN

FDMT800120DC Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench? process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.



FDMT800120DC Features

Max rDS(on) = 4.2 m? at VGS = 10 V, ID = 20 A

Max rDS(on) = 6.4 m? at VGS = 6 V, ID = 16 A

Advanced Package and Silicon combination for low rDS(on) and high efficiency

Next-generation enhanced body diode technology, engineered for soft recovery

Low profile 8x8mm MLP package

MSL1 robust package design

100% UIL tested

RoHS Compliant



FDMT800120DC Applications

OringFET / Load Switching

Synchronous Rectification

DC-DC Conversion



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