FDMT800120DC
- Mfr.Part #
- FDMT800120DC
- Manufacturer
- onsemi
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 120V 20A 8DLCOOL88
- Stock
- 3,543
- In Stock :
- 3,543
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 9.5 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Number of Pins :
- 8
- Power Dissipation-Max :
- 3.2W Ta 156W Tc
- Terminal Finish :
- Tin (Sn)
- Weight :
- 248.52072mg
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 7850pF @ 60V
- Turn-Off Delay Time :
- 40 ns
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 29 ns
- Series :
- Dual Cool™, PowerTrench®
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 107nC @ 10V
- Rise Time :
- 18ns
- Package / Case :
- 8-PowerVDFN
- Drain to Source Voltage (Vdss) :
- 120V
- Reach Compliance Code :
- not_compliant
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 20A Ta 129A Tc
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 129A
- Factory Lead Time :
- 20 Weeks
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Rds On (Max) @ Id, Vgs :
- 4.14m Ω @ 20A, 10V
- Datasheets
- FDMT800120DC

N-Channel Tape & Reel (TR) 4.14m Ω @ 20A, 10V ±20V 7850pF @ 60V 107nC @ 10V 120V 8-PowerVDFN
FDMT800120DC Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench? process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
FDMT800120DC Features
Max rDS(on) = 4.2 m? at VGS = 10 V, ID = 20 A
Max rDS(on) = 6.4 m? at VGS = 6 V, ID = 16 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Next-generation enhanced body diode technology, engineered for soft recovery
Low profile 8x8mm MLP package
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMT800120DC Applications
OringFET / Load Switching
Synchronous Rectification
DC-DC Conversion
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