FDMT800120DC

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Mfr.Part #
FDMT800120DC
Manufacturer
onsemi
Package / Case
8-PowerVDFN
Datasheet
Download
Description
MOSFET N-CH 120V 20A 8DLCOOL88
Stock
3,543
In Stock :
3,543

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
Dual Cool™, PowerTrench®
Factory Lead Time :
20 Weeks
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Fall Time (Typ) :
9.5 ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Package / Case :
8-PowerVDFN
Vgs (Max) :
±20V
Operating Temperature :
-55°C~150°C TJ
Turn-Off Delay Time :
40 ns
JESD-609 Code :
e3
Power Dissipation-Max :
3.2W Ta 156W Tc
Peak Reflow Temperature (Cel) :
260
Rds On (Max) @ Id, Vgs :
4.14m Ω @ 20A, 10V
Turn On Delay Time :
29 ns
ECCN Code :
EAR99
Terminal Finish :
Tin (Sn)
Mounting Type :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
107nC @ 10V
Reach Compliance Code :
not_compliant
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Rise Time :
18ns
FET Type :
N-Channel
Number of Pins :
8
Mount :
Surface Mount
Pbfree Code :
yes
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
20V
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Current - Continuous Drain (Id) @ 25°C :
20A Ta 129A Tc
Continuous Drain Current (ID) :
129A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
7850pF @ 60V
Drain to Source Voltage (Vdss) :
120V
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Weight :
248.52072mg
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMT800120DC from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerVDFN, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:8, FDMT800120DC pinout, FDMT800120DC datasheet PDF, FDMT800120DC amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMT800120DC ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMT800120DC


N-Channel Tape & Reel (TR) 4.14m Ω @ 20A, 10V ±20V 7850pF @ 60V 107nC @ 10V 120V 8-PowerVDFN

FDMT800120DC Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench? process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.



FDMT800120DC Features

Max rDS(on) = 4.2 m? at VGS = 10 V, ID = 20 A

Max rDS(on) = 6.4 m? at VGS = 6 V, ID = 16 A

Advanced Package and Silicon combination for low rDS(on) and high efficiency

Next-generation enhanced body diode technology, engineered for soft recovery

Low profile 8x8mm MLP package

MSL1 robust package design

100% UIL tested

RoHS Compliant



FDMT800120DC Applications

OringFET / Load Switching

Synchronous Rectification

DC-DC Conversion



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