FDMT80040DC

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Mfr.Part #
FDMT80040DC
Manufacturer
onsemi
Package / Case
8-PowerVDFN
Datasheet
Download
Description
MOSFET N-CH 40V 420A 8PQFN
Stock
919
In Stock :
919

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
8-PowerVDFN
Vgs (Max) :
±20V
Rds On (Max) @ Id, Vgs :
0.56m Ω @ 64A, 10V
Weight :
248.52072mg
Current - Continuous Drain (Id) @ 25°C :
420A Tc
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Operating Temperature :
-55°C~150°C TJ
Drain to Source Voltage (Vdss) :
40V
Packaging :
Tape and Reel (TR)
Factory Lead Time :
20 Weeks
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
338nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Mount :
Surface Mount
Vgs(th) (Max) @ Id :
4V @ 250µA
Reach Compliance Code :
not_compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
156W Tc
Mounting Type :
Surface Mount
Pbfree Code :
yes
Input Capacitance (Ciss) (Max) @ Vds :
26110pF @ 20V
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Datasheets
FDMT80040DC
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMT80040DC from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerVDFN, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, FDMT80040DC pinout, FDMT80040DC datasheet PDF, FDMT80040DC amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMT80040DC ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMT80040DC


N-Channel Tape & Reel (TR) 0.56m Ω @ 64A, 10V ±20V 26110pF @ 20V 338nC @ 10V 40V 8-PowerVDFN

FDMT80040DC Description


FDMT80040DC is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 40V. Utilizing the cutting-edge PowerTrench? method, this N-Channel MOSFET was created. The lowest rDS(on) while maintaining outstanding switching performance has been achieved by combining advancements in both silicon and Dual CoolTM package technologies. This is made possible by the incredibly low Junction-to-Ambient thermal resistance.



FDMT80040DC Features


  • Max rDS(on) = 0.56 mΩ at VGS = 10 V, ID = 64 A

  • Max rDS(on) = 0.9 mΩ at VGS = 6 V, ID = 47 A

  • Advanced Package and Silicon Combination for Low rDS(on)and High Efficiency

  • Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery

  • Low Profile 8x8mm MLP Package

  • MSL1 Robust Package Design

  • 100% UIL Tested

  • RoHS Compliant



FDMT80040DC Applications


  • Oring FET / Load Switch

  • Synchronous Rectification

  • DC-DC Conversion


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