FDMS7620S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Weight :

211mg

Turn-Off Delay Time :

17.4 ns

Published :

2011

Vgs(th) (Max) @ Id :

3V @ 250µA

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

20m Ω @ 10.1A, 10V

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Number of Terminations :

6

Height :

750μm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

Feedback Cap-Max (Crss) :

31 pF

Packaging :

Tape and Reel (TR)

Factory Lead Time :

16 Weeks

Operating Temperature :

-55°C~150°C TJ

Width :

6mm

Gate to Source Voltage (Vgs) :

20V

Rise Time :

1.8ns

Mount :

Surface Mount

Fall Time (Typ) :

1.5 ns

Package / Case :

8-PowerWDFN

JESD-609 Code :

e4

Case Connection :

DRAIN SOURCE

Threshold Voltage :

2.2V

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Transistor Application :

SWITCHING

Series :

PowerTrench®

Max Power Dissipation :

2.5W

Turn On Delay Time :

6.6 ns

REACH SVHC :

No SVHC

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

10.1A 12.4A

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual)

Drain to Source Breakdown Voltage :

30V

Number of Elements :

2

Continuous Drain Current (ID) :

12.4A

Drain Current-Max (Abs) (ID) :

0.0101A

Input Capacitance (Ciss) (Max) @ Vds :

608pF @ 15V

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Length :

5mm

Power - Max :

1W

Power Dissipation :

2.2W

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

JESD-30 Code :

R-PDSO-N6

Number of Pins :

8