FDMS001N025DSD

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

DS Breakdown Voltage-Min :

25V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

FET Feature :

Standard

Drain Current-Max (Abs) (ID) :

19A

Factory Lead Time :

23 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 3 weeks ago)

Terminal Form :

NO LEAD

Reach Compliance Code :

not_compliant

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1370pF 5105pF @ 13V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

30nC, 104nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

19A Ta 69A Tc 38A Ta 165A Tc

JESD-30 Code :

R-PDSO-N8

Transistor Application :

SWITCHING

Package / Case :

8-PowerWDFN

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

121 mJ

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

25V

Surface Mount :

yes

Number of Terminations :

8

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power - Max :

2.1W Ta 26W Tc 2.3W Ta 42W Tc

FET Type :

2 N-Channel (Dual) Asymmetrical

Rds On (Max) @ Id, Vgs :

3.25m Ω @ 19A, 10V, 920μ Ω @ 38A, 10V

Pulsed Drain Current-Max (IDM) :

381A

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

PowerTrench®

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.5V @ 320μA, 3V @ 1mA

Drain-source On Resistance-Max :

0.00325Ohm