FDMS7600AS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

1W

ECCN Code :

EAR99

Radiation Hardening :

No

Series :

PowerTrench®

Drain to Source Breakdown Voltage :

30V

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Continuous Drain Current (ID) :

40A

Turn-Off Delay Time :

45 ns

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

1W

Mounting Type :

Surface Mount

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Package / Case :

8-PowerWDFN

Terminal Form :

Flat

Rise Time :

7.6ns

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Weight :

211mg

Length :

5mm

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

Mount :

Surface Mount

JESD-609 Code :

e4

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Nominal Vgs :

1 V

Number of Terminations :

6

Vgs(th) (Max) @ Id :

3V @ 250µA

Case Connection :

SOURCE

Drain-source On Resistance-Max :

0.0075Ohm

Factory Lead Time :

16 Weeks

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 15V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

1V

FET Type :

2 N-Channel (Dual)

Current - Continuous Drain (Id) @ 25°C :

12A 22A

Height :

700μm

Width :

6mm

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PDSO-F6

Fall Time (Typ) :

5.2 ns

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 12A, 10V