FDMS3624S
- Mfr.Part #
- FDMS3624S
- Manufacturer
- onsemi
- Package / Case
- Datasheet
- Download
- Description
- MOSFET 2N-CH 25V 17.5A/30A 8PQFN
- Stock
- 2,433
- In Stock :
- 2,433
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Height :
- 1.05mm
- Max Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance :
- 1.57nF
- ECCN Code :
- EAR99
- Number of Pins :
- 8
- Rds On Max :
- 5 mΩ
- Element Configuration :
- Dual
- Polarity/Channel Type :
- N-Channel
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 2
- JESD-609 Code :
- e3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminations :
- 6
- Drain to Source Breakdown Voltage :
- 25V
- Weight :
- 90mg
- JESD-30 Code :
- R-PDSO-N6
- Drain Current-Max (Abs) (ID) :
- 17.5A
- Width :
- 6.1mm
- Turn-Off Delay Time :
- 23 ns
- Factory Lead Time :
- 18 Weeks
- Pbfree Code :
- yes
- Max Operating Temperature :
- 150°C
- Mount :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 5.1mm
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 7 ns
- Drain to Source Resistance :
- 5mOhm
- Continuous Drain Current (ID) :
- 30A
- Gate to Source Voltage (Vgs) :
- 12V
- Drain to Source Voltage (Vdss) :
- 25V
- Case Connection :
- DRAIN SOURCE
- Transistor Application :
- SWITCHING
- Min Operating Temperature :
- -55°C
- Power Dissipation :
- 2.5W
- Datasheets
- FDMS3624S

FDMS3624S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMS3624S Description
The device includes two dedicated N-channel MOSFET in a dual PQFN package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. Control MOSFET (Q1) and synchronous SyncFET (Q2) are designed to provide optimal power efficiency.
FDMS3624S Features
Q1: N-Channel
Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 Al
Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 Al
Q2: N-Channel
Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 Al
Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 Al
Low inductance packaging shortens rise/fall times, resulting in lower switching lossesl
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringingl
RoHS Compliantl
FDMS3624S Applications
Distribution
Notebook PC
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