FDMS3624S

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Mfr.Part #
FDMS3624S
Manufacturer
onsemi
Package / Case
Datasheet
Download
Description
MOSFET 2N-CH 25V 17.5A/30A 8PQFN
Stock
2,433
In Stock :
2,433

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Height :
1.05mm
Max Power Dissipation :
1W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance :
1.57nF
ECCN Code :
EAR99
Number of Pins :
8
Rds On Max :
5 mΩ
Element Configuration :
Dual
Polarity/Channel Type :
N-Channel
Terminal Finish :
Tin (Sn)
RoHS Status :
ROHS3 Compliant
Number of Elements :
2
JESD-609 Code :
e3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminations :
6
Drain to Source Breakdown Voltage :
25V
Weight :
90mg
JESD-30 Code :
R-PDSO-N6
Drain Current-Max (Abs) (ID) :
17.5A
Width :
6.1mm
Turn-Off Delay Time :
23 ns
Factory Lead Time :
18 Weeks
Pbfree Code :
yes
Max Operating Temperature :
150°C
Mount :
Surface Mount
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Radiation Hardening :
No
Operating Mode :
ENHANCEMENT MODE
Length :
5.1mm
Packaging :
Tape and Reel (TR)
Turn On Delay Time :
7 ns
Drain to Source Resistance :
5mOhm
Continuous Drain Current (ID) :
30A
Gate to Source Voltage (Vgs) :
12V
Drain to Source Voltage (Vdss) :
25V
Case Connection :
DRAIN SOURCE
Transistor Application :
SWITCHING
Min Operating Temperature :
-55°C
Power Dissipation :
2.5W
Datasheets
FDMS3624S
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDMS3624S from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Number of Terminations:6, FDMS3624S pinout, FDMS3624S datasheet PDF, FDMS3624S amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDMS3624S ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS3624S


FDMS3624S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDMS3624S      Description


   The device includes two dedicated N-channel MOSFET in a dual PQFN package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. Control MOSFET (Q1) and synchronous SyncFET (Q2) are designed to provide optimal power efficiency.


FDMS3624S      Features


Q1: N-Channel

Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 Al

Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 Al

Q2: N-Channel

Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 Al

Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 Al

Low inductance packaging shortens rise/fall times, resulting in lower switching lossesl

MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringingl

RoHS Compliantl


FDMS3624S           Applications


Distribution

Notebook PC


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