FDMS3622S
- Mfr.Part #
- FDMS3622S
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 7,966
- In Stock :
- 7,966
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Weight :
- 171mg
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Package / Case :
- 8-PowerTDFN
- Continuous Drain Current (ID) :
- 34A
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Width :
- 6.1mm
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- FET Type :
- 2 N-Channel (Dual) Asymmetrical
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Series :
- PowerTrench®
- Input Capacitance (Ciss) (Max) @ Vds :
- 1570pF @ 13V
- Number of Elements :
- 2
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 17.5A 34A
- Number of Pins :
- 8
- Drain-source On Resistance-Max :
- 0.005ohm
- FET Feature :
- Logic Level Gate
- Case Connection :
- DRAIN SOURCE
- JESD-30 Code :
- R-PDSO-N6
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 6
- Drain Current-Max (Abs) (ID) :
- 17.5A
- Drain to Source Breakdown Voltage :
- 25V
- Factory Lead Time :
- 13 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 23 ns
- Gate to Source Voltage (Vgs) :
- 12V
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Turn On Delay Time :
- 7 ns
- Element Configuration :
- Dual
- Height :
- 1.05mm
- Power Dissipation :
- 2.5W
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 17.5A, 10V
- Max Power Dissipation :
- 1W
- Length :
- 5.1mm
- Mounting Type :
- Surface Mount
- Datasheets
- FDMS3622S

FDMS3622S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
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