FDMS3615S

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

18A

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Drain Current-Max (Abs) (ID) :

16A

Height :

1.05mm

Number of Elements :

2

Transistor Element Material :

SILICON

Pbfree Code :

yes

Max Power Dissipation :

1W

Length :

5.1mm

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

18 Weeks

Width :

6.1mm

Case Connection :

DRAIN SOURCE

Mount :

Surface Mount

Transistor Application :

SWITCHING

FET Type :

2 N-Channel (Dual) Asymmetrical

FET Feature :

Logic Level Gate

Operating Temperature :

-55°C~150°C TJ

Published :

2011

Fall Time (Typ) :

2.2 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-PowerTDFN

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Terminations :

6

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Series :

PowerTrench®

Power Dissipation :

1W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

3ns

JESD-30 Code :

R-PDSO-N6

Turn-Off Delay Time :

24 ns

Number of Pins :

8

Radiation Hardening :

No

Feedback Cap-Max (Crss) :

115 pF

Weight :

90mg

Current - Continuous Drain (Id) @ 25°C :

16A 18A

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 16A, 10V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

25V

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1765pF @ 13V