FDMS3602S
- Mfr.Part #
- FDMS3602S
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 7,805
- In Stock :
- 7,805
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Number of Terminations :
- 6
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Factory Lead Time :
- 13 Weeks
- Published :
- 2006
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- 2 N-Channel (Dual)
- Power Dissipation :
- 2.5W
- Series :
- PowerTrench®
- Rds On (Max) @ Id, Vgs :
- 5.6m Ω @ 15A, 10V
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 40A
- Resistance :
- 5.6MOhm
- Height :
- 1.05mm
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Weight :
- 90mg
- Rise Time :
- 4.2ns
- Current - Continuous Drain (Id) @ 25°C :
- 15A 26A
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1680pF @ 13V
- Width :
- 6mm
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Number of Elements :
- 2
- Length :
- 5mm
- Continuous Drain Current (ID) :
- 26A
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 3.2 ns
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 8-PowerTDFN
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 8
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN SOURCE
- Drain Current-Max (Abs) (ID) :
- 15A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code :
- R-PDSO-N6
- Turn-Off Delay Time :
- 31 ns
- Terminal Finish :
- Tin (Sn)
- Drain to Source Breakdown Voltage :
- 25V
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1W
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- FET Feature :
- Logic Level Gate
- Nominal Vgs :
- 1.8 V
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- Datasheets
- FDMS3602S
FDMS3602S Documents

FDMS3602S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMS3602S Description
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
FDMS3602S Features
Q1: N-Channel
Max RDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A
Max RDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A
Q2: N-Channel
Max RDS(on) = 2.2 mΩ at VGS = 10 V, ID= 26 A
Max RDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A
Low-inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
FDMS3602S Applications
This product is general usage and suitable for many different applications.
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