FDMS3602S

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-30 Code :

R-PDSO-N6

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

3.2 ns

FET Type :

2 N-Channel (Dual)

Terminal Finish :

Tin (Sn)

Number of Elements :

2

Avalanche Energy Rating (Eas) :

50 mJ

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Nominal Vgs :

1.8 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Series :

PowerTrench®

Drain to Source Breakdown Voltage :

25V

RoHS Status :

ROHS3 Compliant

Weight :

90mg

FET Feature :

Logic Level Gate

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

15A

Continuous Drain Current (ID) :

26A

Width :

6mm

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Factory Lead Time :

13 Weeks

Power Dissipation :

2.5W

Turn-Off Delay Time :

31 ns

Rise Time :

4.2ns

Number of Terminations :

6

Package / Case :

8-PowerTDFN

Mounting Type :

Surface Mount

Resistance :

5.6MOhm

Number of Pins :

8

Pulsed Drain Current-Max (IDM) :

40A

Published :

2006

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 13V

Case Connection :

DRAIN SOURCE

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Max Power Dissipation :

1W

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 15A, 10V

Height :

1.05mm

Transistor Element Material :

SILICON

Length :

5mm

Current - Continuous Drain (Id) @ 25°C :

15A 26A

Vgs(th) (Max) @ Id :

3V @ 250µA