FDMS3602S

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Factory Lead Time :

13 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 13V

Pulsed Drain Current-Max (IDM) :

40A

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3V @ 250µA

Weight :

90mg

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

15A 26A

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN SOURCE

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

50 mJ

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 15A, 10V

Max Power Dissipation :

1W

Power Dissipation :

2.5W

Operating Temperature :

-55°C~150°C TJ

Height :

1.05mm

FET Feature :

Logic Level Gate

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Width :

6mm

JESD-30 Code :

R-PDSO-N6

Mounting Type :

Surface Mount

Resistance :

5.6MOhm

Series :

PowerTrench®

Drain Current-Max (Abs) (ID) :

15A

Published :

2006

Rise Time :

4.2ns

JESD-609 Code :

e3

Number of Pins :

8

Radiation Hardening :

No

Continuous Drain Current (ID) :

26A

Nominal Vgs :

1.8 V

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Turn-Off Delay Time :

31 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Fall Time (Typ) :

3.2 ns

Drain to Source Breakdown Voltage :

25V

Mount :

Surface Mount

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Length :

5mm

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual)

Package / Case :

8-PowerTDFN

Number of Terminations :

6

REACH SVHC :

No SVHC