FDMS3600S
- Mfr.Part #
- FDMS3600S
- Manufacturer
- onsemi
- Package / Case
- Datasheet
- Download
- Description
- MOSFET 2N-CH 25V 15A/30A 8PQFN
- Stock
- 13,303
- In Stock :
- 13,303
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.05mm
- Case Connection :
- DRAIN SOURCE
- Turn-Off Delay Time :
- 38 ns
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 15A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Element Configuration :
- Dual
- Factory Lead Time :
- 13 Weeks
- Min Operating Temperature :
- -55°C
- Feedback Cap-Max (Crss) :
- 90 pF
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Input Capacitance :
- 1.68nF
- Terminal Position :
- QUAD
- Number of Elements :
- 2
- Drain to Source Breakdown Voltage :
- 25V
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Drain to Source Resistance :
- 1.6mOhm
- Number of Terminations :
- 7
- Rise Time :
- 5.3ns
- JESD-30 Code :
- R-PQFP-N7
- JESD-609 Code :
- e3
- Number of Pins :
- 8
- Nominal Vgs :
- 1.8 V
- Drain to Source Voltage (Vdss) :
- 25V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Width :
- 6mm
- Rds On Max :
- 5.6 mΩ
- Max Power Dissipation :
- 1W
- REACH SVHC :
- No SVHC
- Max Operating Temperature :
- 150°C
- Polarity/Channel Type :
- N-Channel
- Length :
- 5mm
- Power Dissipation :
- 2.5W
- Weight :
- 171mg
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 30A
- Fall Time (Typ) :
- 3.9 ns
- Datasheets
- FDMS3600S
FDMS3600S Documents

FDMS3600S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMS3600S Description
In a twin PQFN packaging, this device has two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.
FDMS3600S Features
-
Maximum RDS(on) at VGS = 10 V, ID = 30 A is 1.6 m.
-
At VGS = 4.5 V, ID = 25 A, the maximum RDS(on) is 2.4 m.
-
Reduced rise/fall periods due to reduced inductance packing reduce switching losses.
-
Optimal designing for lower circuit inductance and less switch node ringing is made possible by MOSFET integration.
-
Conforms to RoHS
FDMS3600S Applications
Notebook PC
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