FDMS3600S
- Mfr.Part #
- FDMS3600S
- Manufacturer
- onsemi
- Package / Case
- Datasheet
- Download
- Description
- MOSFET 2N-CH 25V 15A/30A 8PQFN
- Stock
- 13,303
- In Stock :
- 13,303
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Max Operating Temperature :
- 150°C
- Radiation Hardening :
- No
- Min Operating Temperature :
- -55°C
- JESD-30 Code :
- R-PQFP-N7
- Rise Time :
- 5.3ns
- REACH SVHC :
- No SVHC
- Drain to Source Resistance :
- 1.6mOhm
- Polarity/Channel Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- Max Power Dissipation :
- 1W
- Length :
- 5mm
- Number of Elements :
- 2
- Power Dissipation :
- 2.5W
- Drain to Source Voltage (Vdss) :
- 25V
- Terminal Finish :
- Tin (Sn)
- Input Capacitance :
- 1.68nF
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 171mg
- Height :
- 1.05mm
- Feedback Cap-Max (Crss) :
- 90 pF
- Factory Lead Time :
- 13 Weeks
- Width :
- 6mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 30A
- Terminal Position :
- QUAD
- Number of Terminations :
- 7
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain Current-Max (Abs) (ID) :
- 15A
- Case Connection :
- DRAIN SOURCE
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 25V
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Dual
- Number of Pins :
- 8
- Operating Mode :
- ENHANCEMENT MODE
- Nominal Vgs :
- 1.8 V
- Rds On Max :
- 5.6 mΩ
- Turn-Off Delay Time :
- 38 ns
- Fall Time (Typ) :
- 3.9 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Datasheets
- FDMS3600S

FDMS3600S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMS3600S Description
In a twin PQFN packaging, this device has two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.
FDMS3600S Features
-
Maximum RDS(on) at VGS = 10 V, ID = 30 A is 1.6 m.
-
At VGS = 4.5 V, ID = 25 A, the maximum RDS(on) is 2.4 m.
-
Reduced rise/fall periods due to reduced inductance packing reduce switching losses.
-
Optimal designing for lower circuit inductance and less switch node ringing is made possible by MOSFET integration.
-
Conforms to RoHS
FDMS3600S Applications
Notebook PC
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