FDMS3600S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Element Configuration :

Dual

Power Dissipation :

2.5W

RoHS Status :

ROHS3 Compliant

Rds On Max :

5.6 mΩ

Number of Pins :

8

Nominal Vgs :

1.8 V

Input Capacitance :

1.68nF

Gate to Source Voltage (Vgs) :

20V

Height :

1.05mm

Drain to Source Voltage (Vdss) :

25V

Weight :

171mg

Pbfree Code :

yes

Fall Time (Typ) :

3.9 ns

Number of Elements :

2

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

25V

Rise Time :

5.3ns

JESD-609 Code :

e3

Drain to Source Resistance :

1.6mOhm

Number of Terminations :

7

Min Operating Temperature :

-55°C

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Max Power Dissipation :

1W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Turn-Off Delay Time :

38 ns

JESD-30 Code :

R-PQFP-N7

Factory Lead Time :

13 Weeks

Case Connection :

DRAIN SOURCE

Drain Current-Max (Abs) (ID) :

15A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Length :

5mm

Terminal Position :

QUAD

Mount :

Surface Mount

Continuous Drain Current (ID) :

30A

Terminal Finish :

Tin (Sn)

Width :

6mm

REACH SVHC :

No SVHC

Polarity/Channel Type :

N-Channel

Feedback Cap-Max (Crss) :

90 pF