FDJ1027P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 10V

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Mounting Type :

Surface Mount

Terminal Form :

Flat

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Package / Case :

SC75-6 FLMP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

FET Type :

2 P-Channel (Dual)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Pbfree Code :

yes

JESD-609 Code :

e4

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

COMMERCIAL

Series :

PowerTrench®

Power - Max :

900mW

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

20V

Drain Current-Max (Abs) (ID) :

2.8A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

Logic Level Gate

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

20V

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

12A

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Drain-source On Resistance-Max :

0.16Ohm

Current - Continuous Drain (Id) @ 25°C :

2.8A

Terminal Finish :

NICKEL PALLADIUM GOLD

Rds On (Max) @ Id, Vgs :

160m Ω @ 2.8A, 4.5V

JESD-30 Code :

R-PDSO-F6

Surface Mount :

yes

Transistor Element Material :

SILICON

Number of Terminations :

6