FDJ1027P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

20V

DS Breakdown Voltage-Min :

20V

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

2.8A

Terminal Form :

Flat

Pulsed Drain Current-Max (IDM) :

12A

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

Pbfree Code :

yes

Terminal Finish :

NICKEL PALLADIUM GOLD

Series :

PowerTrench®

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Surface Mount :

yes

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

160m Ω @ 2.8A, 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Package / Case :

SC75-6 FLMP

Mounting Type :

Surface Mount

Pin Count :

6

Qualification Status :

COMMERCIAL

FET Type :

2 P-Channel (Dual)

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 10V

Drain Current-Max (Abs) (ID) :

2.8A

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.16Ohm

Power - Max :

900mW

JESD-30 Code :

R-PDSO-F6

JESD-609 Code :

e4

Transistor Application :

SWITCHING