FDJ1027P
- Mfr.Part #
- FDJ1027P
- Manufacturer
- onsemi
- Package / Case
- SC75-6 FLMP
- Datasheet
- Download
- Description
- MOSFET 2P-CH 20V 2.8A SC-75
- Stock
- 48,315
- In Stock :
- 48,315
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Number of Elements :
- 2
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 20V
- Series :
- PowerTrench®
- Packaging :
- Tape and Reel (TR)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package / Case :
- SC75-6 FLMP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Flat
- Drain Current-Max (Abs) (ID) :
- 2.8A
- Pin Count :
- 6
- Current - Continuous Drain (Id) @ 25°C :
- 2.8A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.16Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- yes
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 P-Channel (Dual)
- Qualification Status :
- COMMERCIAL
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 2.8A, 4.5V
- Reach Compliance Code :
- Unknown
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 290pF @ 10V
- DS Breakdown Voltage-Min :
- 20V
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- JESD-609 Code :
- e4
- Gate Charge (Qg) (Max) @ Vgs :
- 4nC @ 4.5V
- Power - Max :
- 900mW
- JESD-30 Code :
- R-PDSO-F6
- Pulsed Drain Current-Max (IDM) :
- 12A
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Terminal Finish :
- NICKEL PALLADIUM GOLD
- Number of Terminations :
- 6
- Datasheets
- FDJ1027P

FDJ1027P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Rochester Electronics, LLC stock available at
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