FDJ128N
- Mfr.Part #
- FDJ128N
- Manufacturer
- onsemi
- Package / Case
- SC75-6 FLMP
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 5.5A SC75-6 FLMP
- Stock
- 472,920
- In Stock :
- 472,920
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Ta
- Rds On Max :
- 35 mΩ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 35mOhm @ 5.5A, 4.5V
- Fall Time (Typ) :
- 5 ns
- Number of Pins :
- 75
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Package / Case :
- SC75-6 FLMP
- Vgs (Max) :
- ±12V
- Input Capacitance :
- 543pF
- Power Dissipation-Max :
- 1.6W Ta
- Min Operating Temperature :
- -55°C
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 5.5A
- Power Dissipation :
- 1.6W
- Drain to Source Voltage (Vdss) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 20V
- RoHS Status :
- RoHS Compliant
- Series :
- PowerTrench®
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Current Rating :
- 5.5A
- Supplier Device Package :
- SC75-6 FLMP
- Mount :
- Surface Mount
- Published :
- 2004
- Input Capacitance (Ciss) (Max) @ Vds :
- 543pF @ 10V
- Drain to Source Resistance :
- 35mOhm
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 14 ns
- Threshold Voltage :
- 1V
- FET Type :
- N-Channel
- Max Operating Temperature :
- 150°C
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 5V
- Drain to Source Breakdown Voltage :
- 20V
- Rise Time :
- 5ns
- Gate to Source Voltage (Vgs) :
- 12V
- Datasheets
- FDJ128N
FDJ128N Documents
N-Channel Tape & Reel (TR) 35mOhm @ 5.5A, 4.5V ±12V 543pF @ 10V 8nC @ 5V 20V SC75-6 FLMP
Description
The FDJ128N is an N-Channel 2.5 Vgs Specified PowerTrench? MOSFET. The sophisticated low voltage PowerTrench technology from Fairchild is used in this N-Channel -2.5V specified MOSFET. For battery power management applications, it has been optimized.
Features
-
High performance trench technology for extremely low RDS(ON)
-
Compact industry standard SC75-6 surface mount package
-
5.5 A, 20 V. RDS(ON) = 35 m? @ VGS = 4.5 V
RDS(ON) = 51 m? @ VGS = 2.5 V
-
Low gate charge
-
Low On-Resistance: U-MOS for products with 250 V or less, SJ-MOS (or DTMOS) are advantageous for products with more than that
Applications
-
Battery management
-
Automotive electronics
-
As switching devices in electronic control units
-
As power converters in modern electric vehicles
-
Control conductivity
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