FDD5N50TM-WS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2A, 10V

Power Dissipation-Max :

40W Tc

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

30V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

256 mJ

JESD-609 Code :

e3

Vgs (Max) :

±30V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn On Delay Time :

13 ns

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 25V

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

8 Weeks

Radiation Hardening :

No

Number of Terminations :

2

Number of Elements :

1

Transistor Element Material :

SILICON

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

4A

Weight :

260.37mg

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn-Off Delay Time :

28 ns

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Fall Time (Typ) :

20 ns

Element Configuration :

Single

Series :

UniFET™

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Power Dissipation :

40W

Rise Time :

22ns

JEDEC-95 Code :

TO-252AA

Drain to Source Breakdown Voltage :

500V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

4A