FDD5612

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

2.4 V

Resistance :

64mOhm

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Width :

6.22mm

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Weight :

260.37mg

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Pbfree Code :

yes

FET Type :

N-Channel

Series :

PowerTrench®

JESD-609 Code :

e3

Fall Time (Typ) :

4 ns

Current Rating :

18A

Radiation Hardening :

No

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

55m Ω @ 5.4A, 10V

Mount :

Surface Mount

Factory Lead Time :

8 Weeks

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Termination :

SMD/SMT

Continuous Drain Current (ID) :

18A

Number of Pins :

3

Number of Terminations :

2

Height :

2.39mm

Transistor Application :

SWITCHING

Rise Time :

4ns

Published :

2016

Avalanche Energy Rating (Eas) :

90 mJ

Voltage - Rated DC :

60V

Threshold Voltage :

2.4V

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Dual Supply Voltage :

60V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Current - Continuous Drain (Id) @ 25°C :

5.4A Ta

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

3.8W Ta 42W Tc

Turn On Delay Time :

8 ns

Turn-Off Delay Time :

24 ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

42W

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 9 hours ago)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Breakdown Voltage :

60V

Length :

6.73mm

Vgs(th) (Max) @ Id :

3V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 30V