FDD5612
- Mfr.Part #
- FDD5612
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 121,099
- In Stock :
- 121,099
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current Rating :
- 18A
- Factory Lead Time :
- 8 Weeks
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- ACTIVE (Last Updated: 9 hours ago)
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 4 ns
- Resistance :
- 64mOhm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Rise Time :
- 4ns
- Weight :
- 260.37mg
- Voltage - Rated DC :
- 60V
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Rds On (Max) @ Id, Vgs :
- 55m Ω @ 5.4A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 660pF @ 30V
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Power Dissipation-Max :
- 3.8W Ta 42W Tc
- Dual Supply Voltage :
- 60V
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 90 mJ
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Height :
- 2.39mm
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 24 ns
- Nominal Vgs :
- 2.4 V
- Length :
- 6.73mm
- Threshold Voltage :
- 2.4V
- Published :
- 2016
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Width :
- 6.22mm
- Continuous Drain Current (ID) :
- 18A
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- Operating Temperature :
- -55°C~175°C TJ
- Series :
- PowerTrench®
- Power Dissipation :
- 42W
- Number of Elements :
- 1
- Termination :
- SMD/SMT
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 5.4A Ta
- Drain to Source Breakdown Voltage :
- 60V
- Turn On Delay Time :
- 8 ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Form :
- Gull wing
- Datasheets
- FDD5612

N-Channel Tape & Reel (TR) 55m Ω @ 5.4A, 10V ±20V 660pF @ 30V 11nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD5612 Description
The FDD5612 is a 60V N-channel PowerTrench? MOSFET that has been specially tailored to minimize the on-state resistance and maintain a low gate charge for superior switching performance. The latest medium voltage power MOSFET FDD5612 is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr), and soft reverse recovery body diode, which contributes to fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance.
FDD5612 Features
-
18 A, 60 V
-RDS(ON) = 55 m @ VGS = 10 V
-RDS(ON) = 64 m @ VGS = 6 V
-
Optimized for Use in High-Frequency DC/DC Converters
-
Low Gade Charge
-
Very Fast Switching
-
This Device is Pb?Free and is RoHS Compliant
FDD5612 Applications
-
Aerospace & defense
-
Appliances
-
Building automation
-
Electronic point of sale (EPOS)
-
Factory automation & control
-
Grid infrastructure
-
Industrial transport (non-car & non-light truck)
-
Lighting
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