FDD5690

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Turn-Off Delay Time :

24 ns

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1110pF @ 25V

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 11 hours ago)

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

10 ns

Number of Pins :

3

Series :

PowerTrench®

Dual Supply Voltage :

60V

Mounting Type :

Surface Mount

Power Dissipation-Max :

3.2W Ta 50W Tc

Avalanche Energy Rating (Eas) :

90 mJ

Continuous Drain Current (ID) :

30A

Number of Elements :

1

Threshold Voltage :

2.5V

Number of Terminations :

2

Power Dissipation :

50W

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Length :

6.73mm

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

27m Ω @ 9A, 10V

Voltage - Rated DC :

60V

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

Weight :

260.37mg

Fall Time (Typ) :

10 ns

Factory Lead Time :

8 Weeks

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Mount :

Surface Mount

Radiation Hardening :

No

Termination :

SMD/SMT

Width :

6.22mm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Nominal Vgs :

2.5 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Packaging :

Tape and Reel (TR)

Rise Time :

9ns

Transistor Application :

SWITCHING

Published :

1999

Current Rating :

30A

Element Configuration :

Single

Resistance :

27mOhm

Drain to Source Breakdown Voltage :

60V

Operating Mode :

ENHANCEMENT MODE

Height :

2.39mm

Transistor Element Material :

SILICON