FDD5690
- Mfr.Part #
- FDD5690
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 30A TO252
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Dual Supply Voltage :
- 60V
- Turn-Off Delay Time :
- 24 ns
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 60V
- Power Dissipation :
- 50W
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Termination :
- SMD/SMT
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 9A, 10V
- Length :
- 6.73mm
- Turn On Delay Time :
- 10 ns
- Width :
- 6.22mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Series :
- PowerTrench®
- Threshold Voltage :
- 2.5V
- Case Connection :
- DRAIN
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- 60V
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Rise Time :
- 9ns
- Published :
- 1999
- Height :
- 2.39mm
- JESD-609 Code :
- e3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 30A
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 11 hours ago)
- Number of Elements :
- 1
- Fall Time (Typ) :
- 10 ns
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 3.2W Ta 50W Tc
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- JESD-30 Code :
- R-PSSO-G2
- Current Rating :
- 30A
- Factory Lead Time :
- 8 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 1110pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Avalanche Energy Rating (Eas) :
- 90 mJ
- Number of Terminations :
- 2
- Weight :
- 260.37mg
- Radiation Hardening :
- No
- Nominal Vgs :
- 2.5 V
- Resistance :
- 27mOhm
- Datasheets
- FDD5690

N-Channel Tape & Reel (TR) 27m Ω @ 9A, 10V ±20V 1110pF @ 25V 32nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD5690 Description
This N-Channel MOSFET has been designed specfcally toimprovel the cveralehciengy ofDC/DC cometers using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster swiching and lower gate charge than other MOSFETS with comparable Reoo speifications.
The resut is a MOSFET that is easy and safer to dive (even at very high frequendies), and DC/DC power supply designs with higher overall efficiency.
FDD5690 Features
30 A, 60 V. RDS(ON) = 0.027 @ VGS = 10 V
RDS(ON) = 0.032 @ V = 6 V.
Low gate charge (23nC typical).
Fast switching speed.
High performance trench technology for extremely
low RDS(ON).
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