FDD5614P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

100m Ω @ 4.5A, 10V

Published :

2005

Input Capacitance (Ciss) (Max) @ Vds :

759pF @ 30V

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

19 ns

Number of Channels :

1

Length :

6.73mm

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Drain to Source Breakdown Voltage :

-60V

JESD-30 Code :

R-PSSO-G2

Height :

2.39mm

Threshold Voltage :

-1.6V

Mount :

Surface Mount

Transistor Application :

SWITCHING

Max Junction Temperature (Tj) :

175°C

Turn On Delay Time :

7 ns

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lifecycle Status :

ACTIVE (Last Updated: 9 hours ago)

Avalanche Energy Rating (Eas) :

90 mJ

Pbfree Code :

yes

Voltage - Rated DC :

-60V

Element Configuration :

Single

Rise Time :

10ns

Series :

PowerTrench®

Power Dissipation :

42W

Current :

15A

Current Rating :

-15A

Lead Free :

Lead Free

Voltage :

60V

FET Type :

P-Channel

Width :

6.6mm

Nominal Vgs :

-1.6 V

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Number of Elements :

1

Termination :

SMD/SMT

Contact Plating :

Tin

JESD-609 Code :

e3

Power Dissipation-Max :

3.8W Ta 42W Tc

Weight :

4.535924g

Radiation Hardening :

No

ECCN Code :

EAR99

Vgs (Max) :

±20V

Number of Terminations :

2

Continuous Drain Current (ID) :

-15A

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Number of Pins :

3

Vgs(th) (Max) @ Id :

3V @ 250µA

Dual Supply Voltage :

-60V

Factory Lead Time :

8 Weeks

Fall Time (Typ) :

12 ns

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Resistance :

100MOhm