FDD5N50TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

UniFET™

Power Dissipation :

40W

Transistor Element Material :

SILICON

Factory Lead Time :

8 Weeks

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 25V

Gate to Source Voltage (Vgs) :

30V

JEDEC-95 Code :

TO-252AA

Pbfree Code :

yes

Rise Time :

22ns

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

20 ns

FET Type :

N-Channel

Turn-Off Delay Time :

28 ns

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

4A

Number of Terminations :

2

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Weight :

260.37mg

Radiation Hardening :

No

Continuous Drain Current (ID) :

4A

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

500V

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

256 mJ

Power Dissipation-Max :

40W Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2A, 10V

Turn On Delay Time :

13 ns

Vgs (Max) :

±30V

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN