FDD2670

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

3.6A

Number of Elements :

1

Number of Terminations :

2

Power Dissipation :

70mW

Input Capacitance (Ciss) (Max) @ Vds :

1228pF @ 100V

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

4V

Drain to Source Breakdown Voltage :

200V

Lead Free :

Lead Free

Published :

2016

Mount :

Surface Mount

Rise Time :

8ns

Voltage - Rated DC :

200V

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Pbfree Code :

yes

Length :

6.73mm

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Termination :

SMD/SMT

Height :

2.39mm

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Radiation Hardening :

No

Fall Time (Typ) :

25 ns

Continuous Drain Current (ID) :

3.6A

Power Dissipation-Max :

3.2W Ta 70W Tc

Factory Lead Time :

4 Weeks

Nominal Vgs :

4 V

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Turn-Off Delay Time :

30 ns

Mounting Type :

Surface Mount

Series :

PowerTrench®

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Dual Supply Voltage :

200V

Avalanche Energy Rating (Eas) :

375 mJ

Terminal Form :

Gull wing

Weight :

260.37mg

JESD-609 Code :

e3

Turn On Delay Time :

13 ns

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

130m Ω @ 3.6A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Width :

6.22mm

FET Type :

N-Channel

Number of Pins :

2