FDD20AN06A0
- Mfr.Part #
- FDD20AN06A0
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 8A/45A TO252AA
- Stock
- 42,396
- In Stock :
- 42,396
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Drain Current-Max (Abs) (ID) :
- 8A
- Input Capacitance (Ciss) (Max) @ Vds :
- 950pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.02Ohm
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- 260
- Series :
- PowerTrench®
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- Qualification Status :
- COMMERCIAL
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 60V
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 60V
- JESD-30 Code :
- R-PSSO-G2
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Pin Count :
- 4
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 8A Ta 45A Tc
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- MATTE TIN
- Power Dissipation-Max :
- 90W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- DRAIN
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Terminal Position :
- Single
- JEDEC-95 Code :
- TO-252AA
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 45A, 10V
- Datasheets
- FDD20AN06A0

N-Channel Tape & Reel (TR) 20m Ω @ 45A, 10V ±20V 950pF @ 25V 19nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD20AN06A0 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 50 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 950pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 8A.Normal operation requires that the DS breakdown voltage remain above 60V.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FDD20AN06A0 Features
the avalanche energy rating (Eas) is 50 mJ
a 60V drain to source voltage (Vdss)
FDD20AN06A0 Applications
There are a lot of Rochester Electronics, LLC
FDD20AN06A0 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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