FDD2572
- Mfr.Part #
- FDD2572
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 4A/29A TO252AA
- Stock
- 17
- In Stock :
- 17
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tape and Reel (TR)
- Height :
- 2.39mm
- Number of Terminations :
- 2
- Nominal Vgs :
- 4 V
- JEDEC-95 Code :
- TO-252AA
- Power Dissipation :
- 135W
- Resistance :
- 54mOhm
- Transistor Element Material :
- SILICON
- Rise Time :
- 14ns
- Continuous Drain Current (ID) :
- 29A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 11 ns
- Terminal Form :
- Gull wing
- Series :
- PowerTrench®
- Voltage - Rated DC :
- 150V
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Current Rating :
- 29A
- Termination :
- SMD/SMT
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta 29A Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Elements :
- 1
- Power Dissipation-Max :
- 135W Tc
- Dual Supply Voltage :
- 150V
- Length :
- 6.73mm
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 150V
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 31 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 54m Ω @ 9A, 10V
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Width :
- 6.22mm
- Fall Time (Typ) :
- 14 ns
- Element Configuration :
- Single
- Threshold Voltage :
- 4V
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Weight :
- 260.37mg
- JESD-30 Code :
- R-PSSO-G2
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 8 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 1770pF @ 25V
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Drain Current-Max (Abs) (ID) :
- 4A
- Operating Temperature :
- -55°C~175°C TJ
- Datasheets
- FDD2572

N-Channel Tape & Reel (TR) 54m Ω @ 9A, 10V ±20V 1770pF @ 25V 34nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD2572 Description
The FDD2572 is an N-channel MOSFET produced using Fairchild Semiconductor's PowerTrench? process. It is suitable for use in high voltage synchronous rectification DC-to-DC converters and off-line UPS applications.
FDD2572 Features
-
UIS Capability (single pulse and repetitive pulse)
-
Low miller charge
-
Low Qrr body diode
FDD2572 Applications
-
DC/DC converters and Off-Line UPS
-
Distributed Power Architectures and VRMs
-
Primary Switch for 24V and 48V Systems
-
High Voltage Synchronous Rectifier
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