FDD2512

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

COMMERCIAL

JESD-609 Code :

e3

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

420m Ω @ 2.2A, 10V

Avalanche Energy Rating (Eas) :

90 mJ

Power Dissipation-Max :

42W Ta

Input Capacitance (Ciss) (Max) @ Vds :

344pF @ 75V

Vgs (Max) :

±20V

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

20A

Terminal Finish :

MATTE TIN

Series :

PowerTrench®

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

DS Breakdown Voltage-Min :

150V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

6.7A Ta

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Pin Count :

3

Drain Current-Max (Abs) (ID) :

6.7A

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.42Ohm

Drain to Source Voltage (Vdss) :

150V

Number of Terminations :

2