FDD20AN06A0-F085
- Mfr.Part #
- FDD20AN06A0-F085
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 8A/45A TO252AA
- Stock
- 3,879
- In Stock :
- 3,879
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 11 ns
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 33 ns
- Drain to Source Breakdown Voltage :
- 60V
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 950pF @ 25V
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Turn-Off Delay Time :
- 23 ns
- Vgs (Max) :
- ±20V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- JESD-30 Code :
- R-PSSO-G2
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain Current-Max (Abs) (ID) :
- 8A
- Terminal Form :
- Gull wing
- Continuous Drain Current (ID) :
- 45A
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 45A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-252AA
- Terminal Finish :
- Tin (Sn)
- Case Connection :
- DRAIN
- Series :
- Automotive, AEC-Q101, PowerTrench®
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Power Dissipation-Max :
- 90W Tc
- Lead Free :
- Lead Free
- Power Dissipation :
- 90W
- Weight :
- 260.37mg
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 8A Ta 45A Tc
- Drain-source On Resistance-Max :
- 0.02Ohm
- Rise Time :
- 98ns
- JESD-609 Code :
- e3
- RoHS Status :
- RoHS Compliant
- Datasheets
- FDD20AN06A0-F085

N-Channel Tape & Reel (TR) 20m Ω @ 45A, 10V ±20V 950pF @ 25V 19nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD20AN06A0-F085 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 50 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 950pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 45A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Drain current refers to the maximum continuous current a device can conduct, and it is 8A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 23 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FDD20AN06A0-F085 Features
the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 45A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 23 ns
FDD20AN06A0-F085 Applications
There are a lot of ON Semiconductor
FDD20AN06A0-F085 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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